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Laptop RAM

SSTC DDR4 SO-DIMMM 3200MHz-1.2V 8GB/16GB/32GB

SSTC DDR4 SO-DIMMM 3200MHz-1.2V 8GB/16GB/32GB

RAM Capacity
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 Interface DDR4 SDRAM 260 Pins
 Туре Unbuffered Small Outline Double Data Rate
Synchronous DRAM
 Features Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
On-board 12C serial presence-detect (SPD) EEPROM
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Data bus write cyclic redundancy check (CRC) Temperature controlled refresh (TCR)
Command/Address (CA) parity
Per DRAM Addressability is supported
8-bit pre-fetch
Fly-by topology
Command/Address latency (CAL)
Terminated control command and address bus
PCB: Height 1.18" (30.00mm)
Gold edge contacts
RoHS Compliant and Halogen-Free
 Power Supply Voltage: Min 1.4V, Max 1.26V, Typical 1.2V
Supply Voltage for Output: Min 1.4V, Max 1.26V, Typical 1.2V
Supply Voltage for DRAM Activating: Min 2.375V, Max 2.75V, Typical: 2.5V Notes
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. DC bandwidth is limited to 20MHZ.
Capacity 8GB/16GB/32GB
Temperature Range Normal Operating Temperature Range: 0-85°C Extended Temperature Range: -85-95°C
Speed / Latency / Voltage 2666MHz/19-19-19-43/1.2V
3200MHz/22-22-22-53/1.2V
Series SO-DIM
Chip HYNIX / MICRON