Laptop RAM
SSTC DDR4 SO-DIMMM 3200MHz-1.2V 8GB/16GB/32GB
SSTC DDR4 SO-DIMMM 3200MHz-1.2V 8GB/16GB/32GB





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Specification
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Support
Interface | DDR4 SDRAM 260 Pins |
Туре | Unbuffered Small Outline Double Data Rate Synchronous DRAM |
Features | Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die VREFDQ generation and calibration On-board 12C serial presence-detect (SPD) EEPROM Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Data bus write cyclic redundancy check (CRC) Temperature controlled refresh (TCR) Command/Address (CA) parity Per DRAM Addressability is supported 8-bit pre-fetch Fly-by topology Command/Address latency (CAL) Terminated control command and address bus PCB: Height 1.18" (30.00mm) Gold edge contacts RoHS Compliant and Halogen-Free |
Power | Supply Voltage: Min 1.4V, Max 1.26V, Typical 1.2V Supply Voltage for Output: Min 1.4V, Max 1.26V, Typical 1.2V Supply Voltage for DRAM Activating: Min 2.375V, Max 2.75V, Typical: 2.5V Notes |
1. Under all conditions VDDQ must be less than or equal to VDD. | |
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. | |
3. DC bandwidth is limited to 20MHZ. | |
Capacity | 8GB/16GB/32GB |
Temperature Range | Normal Operating Temperature Range: 0-85°C Extended Temperature Range: -85-95°C |
Speed / Latency / Voltage | 2666MHz/19-19-19-43/1.2V |
3200MHz/22-22-22-53/1.2V | |
Series | SO-DIM |
Chip | HYNIX / MICRON |


